Uncovering edge states and electrical inhomogeneity in MoS(2) field-effect transistors

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because...

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Detaylı Bibliyografya
Yayımlandı:Proc Natl Acad Sci U S A
Asıl Yazarlar: Wu, Di, Li, Xiao, Luan, Lan, Wu, Xiaoyu, Li, Wei, Yogeesh, Maruthi N., Ghosh, Rudresh, Chu, Zhaodong, Akinwande, Deji, Niu, Qian, Lai, Keji
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: National Academy of Sciences 2016
Konular:
Physical Sciences
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4978287/
https://ncbi.nlm.nih.gov/pubmed/27444021
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1073/pnas.1605982113
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