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On current transients in MoS(2) Field Effect Transistors
We present an experimental investigation of slow transients in the gate and drain currents of MoS(2)-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent tr...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2017
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5599678/ https://ncbi.nlm.nih.gov/pubmed/28912464 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-11930-6 |
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