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On current transients in MoS(2) Field Effect Transistors

We present an experimental investigation of slow transients in the gate and drain currents of MoS(2)-based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent tr...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Macucci, Massimo, Tambellini, Gerry, Ovchinnikov, Dmitry, Kis, Andras, Iannaccone, Giuseppe, Fiori, Gianluca
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5599678/
https://ncbi.nlm.nih.gov/pubmed/28912464
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-11930-6
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