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Probing the Field-Effect Transistor with Monolayer MoS(2) Prepared by APCVD
The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS(2)) is grown on the SiO(2)/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS(2) is system...
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| Publicat a: | Nanomaterials (Basel) |
|---|---|
| Autors principals: | , , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI
2019
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6780524/ https://ncbi.nlm.nih.gov/pubmed/31462000 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9091209 |
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