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Probing the Field-Effect Transistor with Monolayer MoS(2) Prepared by APCVD

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS(2)) is grown on the SiO(2)/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS(2) is system...

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Publicat a:Nanomaterials (Basel)
Autors principals: Han, Tao, Liu, Hongxia, Wang, Shulong, Chen, Shupeng, Xie, Haiwu, Yang, Kun
Format: Artigo
Idioma:Inglês
Publicat: MDPI 2019
Matèries:
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC6780524/
https://ncbi.nlm.nih.gov/pubmed/31462000
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9091209
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