Cargando...

Probing the Field-Effect Transistor with Monolayer MoS(2) Prepared by APCVD

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS(2)) is grown on the SiO(2)/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS(2) is system...

Descripción completa

Guardado en:
Detalles Bibliográficos
Publicado en:Nanomaterials (Basel)
Autores principales: Han, Tao, Liu, Hongxia, Wang, Shulong, Chen, Shupeng, Xie, Haiwu, Yang, Kun
Formato: Artigo
Lenguaje:Inglês
Publicado: MDPI 2019
Materias:
Acceso en línea:https://ncbi.nlm.nih.gov/pmc/articles/PMC6780524/
https://ncbi.nlm.nih.gov/pubmed/31462000
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9091209
Etiquetas: Agregar Etiqueta
Sin Etiquetas, Sea el primero en etiquetar este registro!