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A Horizontal-Gate Monolayer MoS(2) Transistor Based on Image Force Barrier Reduction
Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two-dimensional materials, and complicated fabrication pr...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6780131/ https://ncbi.nlm.nih.gov/pubmed/31480685 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano9091245 |
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