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Influence of post-annealing on the off current of MoS(2) field-effect transistors
Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS(2) is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility a...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer US
2015
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385010/ https://ncbi.nlm.nih.gov/pubmed/25852359 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0773-y |
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