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Fabrication and electrical properties of MoS(2) nanodisc-based back-gated field effect transistors
Two-dimensional (2D) molybdenum disulfide (MoS(2)) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS(2) nanodiscs and their incorporation int...
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| 主要な著者: | , , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2014
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| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3943990/ https://ncbi.nlm.nih.gov/pubmed/24576344 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-100 |
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