Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS(2) Transistors

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS(2)) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS...

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Bibliographic Details
Published in:Nanomaterials (Basel)
Main Authors: Gao, Qingguo, Zhang, Chongfu, Liu, Ping, Hu, Yunfeng, Yang, Kaiqiang, Yi, Zichuan, Liu, Liming, Pan, Xinjian, Zhang, Zhi, Yang, Jianjun, Chi, Feng
Format: Artigo
Language:Inglês
Published: MDPI 2021
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Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC8235638/
https://ncbi.nlm.nih.gov/pubmed/34204492
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061594
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