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Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS(2) Transistors
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS(2)) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS...
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| Pubblicato in: | Nanomaterials (Basel) |
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| Autori principali: | , , , , , , , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
MDPI
2021
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8235638/ https://ncbi.nlm.nih.gov/pubmed/34204492 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061594 |
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