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Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS(2) Transistors
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS(2)) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS...
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| Vydáno v: | Nanomaterials (Basel) |
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| Hlavní autoři: | , , , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
MDPI
2021
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC8235638/ https://ncbi.nlm.nih.gov/pubmed/34204492 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano11061594 |
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