Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor

Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logi...

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Detaylı Bibliyografya
Yayımlandı:Nat Commun
Asıl Yazarlar: Li, Xiao-Xi, Fan, Zhi-Qiang, Liu, Pei-Zhi, Chen, Mao-Lin, Liu, Xin, Jia, Chuan-Kun, Sun, Dong-Ming, Jiang, Xiang-Wei, Han, Zheng, Bouchiat, Vincent, Guo, Jun-Jie, Chen, Jian-Hao, Zhang, Zhi-Dong
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Nature Publishing Group UK 2017
Konular:
Article
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC5645421/
https://ncbi.nlm.nih.gov/pubmed/29042545
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-01128-9
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