Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor

Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logi...

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Udgivet i:Nat Commun
Main Authors: Li, Xiao-Xi, Fan, Zhi-Qiang, Liu, Pei-Zhi, Chen, Mao-Lin, Liu, Xin, Jia, Chuan-Kun, Sun, Dong-Ming, Jiang, Xiang-Wei, Han, Zheng, Bouchiat, Vincent, Guo, Jun-Jie, Chen, Jian-Hao, Zhang, Zhi-Dong
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group UK 2017
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5645421/
https://ncbi.nlm.nih.gov/pubmed/29042545
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-01128-9
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