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Investigation of electronic properties of graphene/Si field-effect transistor
We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, g(m), of the graphene transistors exceeds 3 mS/μm, and...
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| Hlavní autoři: | , , , |
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| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Springer
2012
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3533520/ https://ncbi.nlm.nih.gov/pubmed/23244050 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-677 |
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