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Investigation of electronic properties of graphene/Si field-effect transistor
We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, g(m), of the graphene transistors exceeds 3 mS/μm, and...
Αποθηκεύτηκε σε:
| Κύριοι συγγραφείς: | , , , |
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| Μορφή: | Artigo |
| Γλώσσα: | Inglês |
| Έκδοση: |
Springer
2012
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| Θέματα: | |
| Διαθέσιμο Online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3533520/ https://ncbi.nlm.nih.gov/pubmed/23244050 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-677 |
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