ロード中...
Investigation of electronic properties of graphene/Si field-effect transistor
We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. Oligolayered graphene with a large uniform surface acts as the local gate of the graphene transistors. The scaled transconductance, g(m), of the graphene transistors exceeds 3 mS/μm, and...
保存先:
| 主要な著者: | , , , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2012
|
| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3533520/ https://ncbi.nlm.nih.gov/pubmed/23244050 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-677 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|