Loading...
Graphene nanoribbon field-effect transistor at high bias
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation,...
Na minha lista:
| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer
2014
|
| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4232815/ https://ncbi.nlm.nih.gov/pubmed/25404874 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-604 |
| Tags: |
Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!
|