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Graphene nanoribbon field-effect transistor at high bias
Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation,...
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| Publicat a: | Nanoscale Res Lett |
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| Autors principals: | , , , , |
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Springer
2014
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| Matèries: | |
| Accés en línia: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4232815/ https://ncbi.nlm.nih.gov/pubmed/25404874 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-604 |
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