ロード中...
High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the...
保存先:
| 主要な著者: | , , , , , |
|---|---|
| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2010
|
| 主題: | |
| オンライン･アクセス: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2964476/ https://ncbi.nlm.nih.gov/pubmed/21124629 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9714-y |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|