Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene...

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Udgivet i:Nat Commun
Main Authors: Llinas, Juan Pablo, Fairbrother, Andrew, Borin Barin, Gabriela, Shi, Wu, Lee, Kyunghoon, Wu, Shuang, Yong Choi, Byung, Braganza, Rohit, Lear, Jordan, Kau, Nicholas, Choi, Wonwoo, Chen, Chen, Pedramrazi, Zahra, Dumslaff, Tim, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Fischer, Felix, Zettl, Alex, Ruffieux, Pascal, Yablonovitch, Eli, Crommie, Michael, Fasel, Roman, Bokor, Jeffrey
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group UK 2017
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Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5608806/
https://ncbi.nlm.nih.gov/pubmed/28935943
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41467-017-00734-x
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