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High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors
We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the...
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| Hauptverfasser: | , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2010
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC2964476/ https://ncbi.nlm.nih.gov/pubmed/21124629 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-010-9714-y |
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