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Advances in MoS(2)-Based Field Effect Transistors (FETs)
This paper reviews the original achievements and advances regarding the field effect transistor (FET) fabricated from one of the most studied transition metal dichalcogenides: two-dimensional MoS(2). Not like graphene, which is highlighted by a gapless Dirac cone band structure, Monolayer MoS(2) is...
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| Publicado no: | Nanomicro Lett |
|---|---|
| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer Berlin Heidelberg
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6223905/ https://ncbi.nlm.nih.gov/pubmed/30464966 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s40820-015-0034-8 |
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