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Understanding and Mapping Sensitivity in MoS(2) Field-Effect-Transistor-Based Sensors
Sensors based on two-dimensional (2D) field-effect transistors (FETs) are extremely sensitive and can detect charged analytes with attomolar limits of detection (LOD). Despite some impressive LODs, the operating mechanisms and factors that determine the signal-to-noise ratio in 2D FET-based sensors...
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| Опубликовано в: : | ACS Nano |
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| Главные авторы: | , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
2020
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7895328/ https://ncbi.nlm.nih.gov/pubmed/32790325 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acsnano.0c04192 |
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