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Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
We fabricated multi-layered graphene/MoS(2) heterostructured devices by positioning mechanically exfoliated bulk graphite and single-crystalline 2H-MoS(2) onto Au metal pads on a SiO(2)/Si substrate via a contamination-free dry transfer technique. We also studied the electrical transport properties...
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| Foilsithe in: | Sci Rep |
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| Main Authors: | , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
Nature Publishing Group
2015
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4558713/ https://ncbi.nlm.nih.gov/pubmed/26333680 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep13743 |
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