Cargando...
Monolayer MoS(2) field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Two-dimensional MoS(2) has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS(2) interface still remains an open issue. Here, we report electronic properties of field effect transistor devices us...
Gardado en:
| Publicado en: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2019
|
| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6863907/ https://ncbi.nlm.nih.gov/pubmed/31745127 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-53367-z |
| Tags: |
Engadir etiqueta
Sen Etiquetas, Sexa o primeiro en etiquetar este rexistro!
|