APA引用形式

Gupta, S., Rortais, F., Ohshima, R., Ando, Y., Endo, T., Miyata, Y., & Shiraishi, M. (2019). Monolayer MoS(2) field effect transistor with low Schottky barrier height with ferromagnetic metal contacts. Sci Rep.

シカゴスタイル引用形

Gupta, Sachin, F. Rortais, R. Ohshima, Y. Ando, T. Endo, Y. Miyata, , M. Shiraishi. "Monolayer MoS(2) Field Effect Transistor With Low Schottky Barrier Height With Ferromagnetic Metal Contacts." Sci Rep 2019.

MLA引用形式

Gupta, Sachin, et al. "Monolayer MoS(2) Field Effect Transistor With Low Schottky Barrier Height With Ferromagnetic Metal Contacts." Sci Rep 2019.