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Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors
Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (T...
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| Foilsithe in: | Nanomaterials (Basel) |
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| Main Authors: | , , |
| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe: |
MDPI
2020
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| Ábhair: | |
| Rochtain Ar Líne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7761329/ https://ncbi.nlm.nih.gov/pubmed/33255993 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10122346 |
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