Studies on Carrier Recombination in GaN/AlN Quantum Dots in Nanowires with a Core–Shell Structure

GaN quantum dots embedded in nanowires have attracted much attention due to their superior optical properties. However, due to the large surface-to-volume ratio of the nanowire, the impacts of surface states are the primary issue responsible for the degradation of internal quantum efficiency (IQE) i...

Full beskrivning

Sparad:
Bibliografiska uppgifter
I publikationen:Nanomaterials (Basel)
Huvudupphovsmän: Deng, Jun, Hao, Zhibiao, Wang, Lai, Yu, Jiadong, Wang, Jian, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Li, Hongtao, Zhao, Wei, Liang, Xihui, Wang, Junjun, Luo, Yi
Materialtyp: Artigo
Språk:Inglês
Publicerad: MDPI 2020
Ämnen:
Article
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC7699813/
https://ncbi.nlm.nih.gov/pubmed/33233685
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/nano10112299
Taggar: Lägg till en tagg
Inga taggar, Lägg till första taggen!

Liknande verk