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Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure
In ultra-high sensitive APDs, a vibrate of temperature might bring a fatal decline of the multiplication performance. Conventional method to realize a temperature-stable APD focuses on the optimization of device structure, which has limited effects. While in this paper, a solution by reducing the ca...
Tallennettuna:
| Julkaisussa: | Sci Rep |
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| Päätekijät: | , , , , , , , , , , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
Nature Publishing Group
2016
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5075870/ https://ncbi.nlm.nih.gov/pubmed/27775088 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep35978 |
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