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Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias
Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether–Cl(−) suppressor layer that selectively breaks down within recessed surface features. This work explores Cu deposition when formation of the suppressor blocking layer is limited by the flux of Cl(−)....
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| Publicado no: | J Electrochem Soc |
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| Main Authors: | , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7537470/ https://ncbi.nlm.nih.gov/pubmed/33029031 |
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