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Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias
Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether–Cl(−) suppressor layer that selectively breaks down within recessed surface features. This work explores Cu deposition when formation of the suppressor blocking layer is limited by the flux of Cl(−)....
Tallennettuna:
| Julkaisussa: | J Electrochem Soc |
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| Päätekijät: | , , , , |
| Aineistotyyppi: | Artigo |
| Kieli: | Inglês |
| Julkaistu: |
2019
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| Aiheet: | |
| Linkit: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7537470/ https://ncbi.nlm.nih.gov/pubmed/33029031 |
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