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Effect of Chloride Concentration on Copper Deposition in Through Silicon Vias
Bottom-up Cu deposition in metallized through silicon vias (TSV) depends on a co-adsorbed polyether–Cl(−) suppressor layer that selectively breaks down within recessed surface features. This work explores Cu deposition when formation of the suppressor blocking layer is limited by the flux of Cl(−)....
Gorde:
| Argitaratua izan da: | J Electrochem Soc |
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| Egile Nagusiak: | , , , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
2019
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| Gaiak: | |
| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7537470/ https://ncbi.nlm.nih.gov/pubmed/33029031 |
| Etiketak: |
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