Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

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Detaylı Bibliyografya
Yayımlandı:Nanoscale Res Lett
Asıl Yazarlar: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer US 2019
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://ncbi.nlm.nih.gov/pubmed/31641871
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3160-2
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