Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

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Enregistré dans:
Détails bibliographiques
Publié dans:Nanoscale Res Lett
Auteurs principaux: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Format: Artigo
Langue:Inglês
Publié: Springer US 2019
Sujets:
Nano Express
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://ncbi.nlm.nih.gov/pubmed/31641871
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3160-2
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