Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Main Authors: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2019
Assuntos:
Nano Express
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://ncbi.nlm.nih.gov/pubmed/31641871
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3160-2
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