Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

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Bibliographische Detailangaben
Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2019
Schlagworte:
Nano Express
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://ncbi.nlm.nih.gov/pubmed/31641871
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3160-2
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