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Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions
Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...
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| Veröffentlicht in: | Nanoscale Res Lett |
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| Hauptverfasser: | , , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2019
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6805846/ https://ncbi.nlm.nih.gov/pubmed/31641871 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3160-2 |
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