Tunneling Atomic Layer-Deposited Aluminum Oxide: a Correlated Structural/Electrical Performance Study for the Surface Passivation of Silicon Junctions

Passivation is a key process for the optimization of silicon p-n junctions. Among the different technologies used to passivate the surface and contact interfaces, alumina is widely used. One key parameter is the thickness of the passivation layer that is commonly deposited using atomic layer deposit...

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Bibliografiske detaljer
Udgivet i:Nanoscale Res Lett
Main Authors: Liu, Kangping, Cristini-Robbe, Odile, Elmi, Omar Ibrahim, Wang, Shuang Long, Wei, Bin, Yu, Ingsong, Portier, Xavier, Gourbilleau, Fabrice, Stiévenard, Didier, Xu, Tao
Format: Artigo
Sprog:Inglês
Udgivet: Springer US 2019
Fag:
Nano Express
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC6805846/
https://ncbi.nlm.nih.gov/pubmed/31641871
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3160-2
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