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Functional ferroelectric tunnel junctions on silicon

The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawback...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Guo, Rui, Wang, Zhe, Zeng, Shengwei, Han, Kun, Huang, Lisen, Schlom, Darrell G., Venkatesan, T., Ariando, A, Chen, Jingsheng
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4517170/
https://ncbi.nlm.nih.gov/pubmed/26215429
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12576
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