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Functional ferroelectric tunnel junctions on silicon
The quest for solid state non-volatility memory devices on silicon with high storage density, high speed, low power consumption has attracted intense research on new materials and novel device architectures. Although flash memory dominates in the non-volatile memory market currently, it has drawback...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4517170/ https://ncbi.nlm.nih.gov/pubmed/26215429 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12576 |
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