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Giant tunnelling electroresistance in metal/ferroelectric/semiconductor tunnel junctions by engineering the Schottky barrier

Recently, ferroelectric tunnel junctions have attracted much attention due to their potential applications in non-destructive readout non-volatile memories. Using a semiconductor electrode has been proven effective to enhance the tunnelling electroresistance in ferroelectric tunnel junctions. Here w...

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Опубликовано в: :Nat Commun
Главные авторы: Xi, Zhongnan, Ruan, Jieji, Li, Chen, Zheng, Chunyan, Wen, Zheng, Dai, Jiyan, Li, Aidong, Wu, Di
Формат: Artigo
Язык:Inglês
Опубликовано: Nature Publishing Group 2017
Предметы:
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC5442322/
https://ncbi.nlm.nih.gov/pubmed/28513590
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms15217
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