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Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retenti...

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Bibliografiska uppgifter
I publikationen:Sci Rep
Huvudupphovsmän: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli
Materialtyp: Artigo
Språk:Inglês
Publicerad: Nature Publishing Group UK 2017
Ämnen:
Länkar:https://ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://ncbi.nlm.nih.gov/pubmed/28674444
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04825-z
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