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Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retenti...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group UK 2017
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://ncbi.nlm.nih.gov/pubmed/28674444
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04825-z
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