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Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retenti...

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Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Sci Rep
Egile Nagusiak: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Nature Publishing Group UK 2017
Gaiak:
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://ncbi.nlm.nih.gov/pubmed/28674444
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04825-z
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