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Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retenti...

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Bibliografische gegevens
Gepubliceerd in:Sci Rep
Hoofdauteurs: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: Nature Publishing Group UK 2017
Onderwerpen:
Online toegang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://ncbi.nlm.nih.gov/pubmed/28674444
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04825-z
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