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Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retenti...

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Bibliografski detalji
Izdano u:Sci Rep
Glavni autori: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group UK 2017
Teme:
Online pristup:https://ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://ncbi.nlm.nih.gov/pubmed/28674444
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-04825-z
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