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Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices
Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer US
2015
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4582038/ https://ncbi.nlm.nih.gov/pubmed/26403925 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1076-z |
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