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Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nano-devices

Following the rapid development of the electronics industry and technology, it is expected that future electronic devices will operate based on functional units at the level of electrically active molecules or even atoms. One pathway to observe and characterize such fundamental operation is to focus...

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Библиографические подробности
Опубликовано в: :Nanoscale Res Lett
Главные авторы: Moraru, Daniel, Samanta, Arup, Tyszka, Krzysztof, Anh, Le The, Muruganathan, Manoharan, Mizuno, Takeshi, Jablonski, Ryszard, Mizuta, Hiroshi, Tabe, Michiharu
Формат: Artigo
Язык:Inglês
Опубликовано: Springer US 2015
Предметы:
Online-ссылка:https://ncbi.nlm.nih.gov/pmc/articles/PMC4582038/
https://ncbi.nlm.nih.gov/pubmed/26403925
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-1076-z
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