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Atom devices based on single dopants in silicon nanostructures
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent...
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| Main Authors: | , , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2011
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211992/ https://ncbi.nlm.nih.gov/pubmed/21801408 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-479 |
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