A carregar...
Physics of Strongly-coupled Dopant-atoms in Nanodevices
In silicon nanoscale transistors, dopant atoms can significantly affect the transport characteristics, in particular at low temperatures. Investigation of coupling between neighboring dopants in such devices is essential in defining the properties for transport. In this work, we present an over...
Na minha lista:
| Main Authors: | , , , , , , |
|---|---|
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Universitas Indonesia
2015-12-01
|
| Colecção: | International Journal of Technology |
| Assuntos: | |
| Acesso em linha: | http://ijtech.eng.ui.ac.id/article/view/1480 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|