טוען...
Atom devices based on single dopants in silicon nanostructures
Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent...
שמור ב:
| Main Authors: | , , , , , , , , |
|---|---|
| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
Springer
2011
|
| נושאים: | |
| גישה מקוונת: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3211992/ https://ncbi.nlm.nih.gov/pubmed/21801408 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-6-479 |
| תגים: |
הוספת תג
אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!
|