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Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances
We demonstrate the negative capacitance (NC) effect of HfZrO(x)-based field-effect transistors (FETs) in the experiments. Improved I(DS), SS, and G(m) of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with diffe...
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| Udgivet i: | Nanoscale Res Lett |
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| Main Authors: | , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2019
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6534638/ https://ncbi.nlm.nih.gov/pubmed/31127388 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3013-z |
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