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ZrO(2) Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles
This paper investigates the impacts of post-rapid thermal anneal (RTA) and thickness of ZrO(2) on the polarization P and electrical characteristics of TaN/ZrO(2)/Ge capacitors and FeFETs, respectively. After the RTA ranging from 350 to 500 °C, TaN/ZrO(2)/Ge capacitors with 2.5 and 4 nm-thick amorpho...
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| Publicado en: | Nanoscale Res Lett |
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| Autores principales: | , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Springer US
2020
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7246238/ https://ncbi.nlm.nih.gov/pubmed/32449145 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03353-6 |
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