Low Voltage Operating 2D MoS(2) Ferroelectric Memory Transistor with Hf(1-x)Zr(x)O(2) Gate Structure

Ferroelectric field effect transistor (FeFET) emerges as an intriguing non-volatile memory technology due to its promising operating speed and endurance. However, flipping the polarization requires a high voltage compared with that of reading, impinging the power consumption of writing a cell. Here,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanoscale Res Lett
Hauptverfasser: Zhang, Siqing, Liu, Yan, Zhou, Jiuren, Ma, Meng, Gao, Anyuan, Zheng, Binjie, Li, Lingfei, Su, Xin, Han, Genquan, Zhang, Jincheng, Shi, Yi, Wang, Xiaomu, Hao, Yue
Format: Artigo
Sprache:Inglês
Veröffentlicht: Springer US 2020
Schlagworte:
Nano Express
Online Zugang:https://ncbi.nlm.nih.gov/pmc/articles/PMC7396413/
https://ncbi.nlm.nih.gov/pubmed/32743764
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03384-z
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!

Ähnliche Einträge