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ZrO(x) Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
Here we report the ZrO(x)-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V V(GS) range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrO(x)/TaN capacitors is proposed to be or...
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| Udgivet i: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Format: | Artigo |
| Sprog: | Inglês |
| Udgivet: |
Springer US
2021
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| Fag: | |
| Online adgang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7855158/ https://ncbi.nlm.nih.gov/pubmed/33532927 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03468-w |
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