A carregar...
Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
Traditional ferroelectric devices suffer a lack of scalability. Doped HfO(2) thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline nature. Stable ferroelectric-like behavior is firstly demonstrated in a 3.6-nm-thick a...
Na minha lista:
| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2020
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7310056/ https://ncbi.nlm.nih.gov/pubmed/32572644 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-020-03364-3 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|