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Solution-Processed Gallium–Tin-Based Oxide Semiconductors for Thin-Film Transistors
We investigated the effects of gallium (Ga) and tin (Sn) compositions on the structural and chemical properties of Ga–Sn-mixed (Ga:Sn) oxide films and the electrical properties of Ga:Sn oxide thin-film transistors (TFTs). The thermogravimetric analysis results indicate that solution-processed oxide...
Gespeichert in:
| Veröffentlicht in: | Materials (Basel) |
|---|---|
| Hauptverfasser: | , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
MDPI
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5793544/ https://ncbi.nlm.nih.gov/pubmed/29283408 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11010046 |
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