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Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors
The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm(2)/Vs) and high current ON/OFF ratios (I(On)/I(Off...
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| Publicado no: | Materials (Basel) |
|---|---|
| Main Authors: | , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
MDPI
2019
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6829470/ https://ncbi.nlm.nih.gov/pubmed/31614961 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma12203341 |
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