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Low-temperature fabrication of an HfO(2) passivation layer for amorphous indium–gallium–zinc oxide thin film transistors using a solution process
We report low-temperature solution processing of hafnium oxide (HfO(2)) passivation layers for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). At 150 °C, the hafnium chloride (HfCl(4)) precursor readily hydrolyzed in deionized (DI) water and transformed into an HfO(2) film...
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| Veröffentlicht in: | Sci Rep |
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| Hauptverfasser: | , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Nature Publishing Group UK
2017
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5701140/ https://ncbi.nlm.nih.gov/pubmed/29176568 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-16585-x |
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