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Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO(2) Gate Dielectrics by CF(4) Plasma Treatment
In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO(2) gate insulator and CF(4) plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO(2) gate dielectr...
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| Izdano u: | Materials (Basel) |
|---|---|
| Glavni autori: | , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
MDPI
2018
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5978201/ https://ncbi.nlm.nih.gov/pubmed/29772767 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3390/ma11050824 |
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