A carregar...
Quantitative strain analysis of InAs/GaAs quantum dot materials
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2017
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5368971/ https://ncbi.nlm.nih.gov/pubmed/28349927 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45376 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|