Photoreflectance study of the GaAs buffer layer in InAs/GaAs quantum dots

GaAs buffer layer in InAs /GaAs quantum dots (QDs) was investigated by Photoreflectance (PR) technique at 300 K. PR spectra obtained were compared with commercial GaAs sample PR spectra, and they were analyzed by using the derivative Lorentzian functions as propose...

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Dades bibliogràfiques

Publicat a:	Superficies y vacío
Autors principals:	D.J. Sánchez - Trujillo, J.J. Prías - Barragán, H. Ariza - Calderón, A .O. Pulzara - Mora, M. López - López
Format:	Artigo
Idioma:	Inglês
Publicat:	Sociedad Mexicana de Ciencia y Tecnología de Superficies y Materiales A.C. 2017
Matèries:	Física, Astronomía y Matemáticas
Accés en línia:	https://www.redalyc.org/articulo.oa?id=94254621002
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