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Quantitative strain analysis of InAs/GaAs quantum dot materials
Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...
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| Izdano u: | Sci Rep |
|---|---|
| Glavni autori: | , , , , , , , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2017
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| Teme: | |
| Online pristup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5368971/ https://ncbi.nlm.nih.gov/pubmed/28349927 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45376 |
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