Quantitative strain analysis of InAs/GaAs quantum dot materials

Geometric phase analysis has been applied to high resolution aberration corrected (scanning) transmission electron microscopy images of InAs/GaAs quantum dot (QD) materials. We show quantitatively how the lattice mismatch induced strain varies on the atomic scale and tetragonally distorts the lattic...

Fuld beskrivelse

Na minha lista:
Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Vullum, Per Erik, Nord, Magnus, Vatanparast, Maryam, Thomassen, Sedsel Fretheim, Boothroyd, Chris, Holmestad, Randi, Fimland, Bjørn-Ove, Reenaas, Turid Worren
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2017
Fag:
Article
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5368971/
https://ncbi.nlm.nih.gov/pubmed/28349927
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep45376
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker